- 您现在的位置：买卖IC网 > Sheet目录415 > FDB8441_F085 (Fairchild Semiconductor)MOSFET N-CH 40V 80A D2PAK
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T C = 25 o C, Silicon limited)
Drain Current Continuous (T C = 100 o C, Silicon limited)
Drain Current Continuous (T C = 25 o C, Package limited)
Drain Current Continuous (T A = 25 o C, R θ JA = 43 o C/W)
Pulsed
Ratings
40
±20
262*
185*
120
28
See Figure 4
Units
V
V
A
E AS
P D
Single Pulse Avalanche Energy
Power dissipation
Derate above 25 o C
(Note 1)
947
300
2
mJ
W
W/ o C
T J , T STG
Operating and Storage Temperature
-55 to 175
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case
0.5
o C/W
R θ JA
R θ JA
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient, 1in 2 copper pad area
(Note 2)
62
43
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDB8441
Device
FDB8441
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V
V GS = 0V
V GS = ±20V
T J = 150°C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(th)
r DS( on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V DS = V GS , I D = 250 μ A
I D = 80A, V GS = 10V
I D = 80A, V GS = 10V,
T J = 175°C
2
-
-
2.8
1.9
3.3
4
2.5
4.3
V
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
15000
1250
685
1.1
215
-
-
-
-
280
pF
pF
pF
Ω
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0 to 2V
V DD = 20V
I D = 35A
I g = 1mA
-
-
-
-
29
60
32
49
38
-
-
-
nC
nC
nC
nC
FDB8441 Rev.A2
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDB8442
MOSFET N-CH 40V 80A D2PAK
FDB8443
MOSFET N-CH 40V 120A TO-263AB
FDB8444
MOSFET N-CH 40V 70A TO-263AB
FDB8445
MOSFET N-CH 40V 70A D2PAK
FDB8447L
MOSFET N-CH 40V 15A D2PAK
FDB8453LZ
MOSFET N-CH 40V 16.1A TO-263AB
FDB86102LZ
MOSFET N-CH 100V 30A D2PAK
FDB86135
MOSFET N-CH 100V D2PAK
相关代理商/技术参数
FDB8442
功能描述:MOSFET 40V N-Ch PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8442_10
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.9m??
FDB8442_F085
功能描述:MOSFET 40V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8443
功能描述:MOSFET 40V N-Channel PowerTrench
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8443_11
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 3.0m??
FDB8443_F085
功能描述:MOSFET 40V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8444
功能描述:MOSFET 40V N-Channel PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8444_10
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 5.5m??